Back channel etch chemistry of advanced a-Si:H TFTs
نویسندگان
چکیده
0167-9317/$ see front matter 2010 Elsevier B.V. A doi:10.1016/j.mee.2010.08.001 ⇑ Corresponding author. E-mail address: [email protected] (J. Kanick We report on the effects of back channel etch depth and etchant chemistry on the electrical characteristics of inverted staggered advanced amorphous silicon thin-film transistors. We found that the optimum amorphous silicon film thickness in the channel is about 800–1100 Å. Three dry etch, HBr + Cl2, C2F6, and CCl2F2 + O2, and one wet etch, KOH, chemistries are used for the back channel etch processing. We established that dry etch can be used for the back channel etch of amorphous silicon transistor without degrading its electrical characteristics. 2010 Elsevier B.V. All rights reserved.
منابع مشابه
Self-alignment techniques for fabricating a-Si:H TFTs at 300C on clear plastic
We previously demonstrated highly stable backchannel cut and back-channel passivated amorphous silicon thin-film transistors (a-Si:H TFTs) made at 300C on 2.9-inch x 2.9-inch clear plastic substrates [1]. Mechanical stress in the TFT stack causes the substrate to expand or contract, which easily results in misalignment between consecutive device layers [2,3]. Therefore we developed three selfal...
متن کاملPolymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays
Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than μc-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-...
متن کاملDynamic Response of a-InGaZnO Thin-Film Transistors for Ultra-High Definition Active-Matrix Liquid Crystal Displays
The dynamic response of amorphous In-Ga-ZnO (a-IGZO) thin-film transistors (TFTs) are compared with hydrogenated amorphous silicon (a-Si:H) TFTs. We study the storage capacitor (Cst) charging characteristics by applying gate and data voltage waveforms for ultra-high definition (UHD) active-matrix flat-panel displays (AMFPDs). Experimental data show that the charging characteristics of a-Si:H TF...
متن کاملP-102: Amorphous Silicon Thin-Film Transistors-based Active-Matrix Organic Light-Emitting Displays
In this paper, we describe hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT)-based active-matrix arrays for active-matrix organic light-emitting displays (AM-OLEDs). The proposed pixel electrode circuits based on three a-Si:H TFTs can supply a continuous output current for AM-OLEDs. Each pixel circuit has compensation circuits that can adjust for the OLED and a-Si:H TFTs electr...
متن کاملNovel a-Si:H TFT Vth Compensation Pixel Circuit for AMOLED
A pixel design for active matrix organic light emitting diode (AM-OLED) displays employing hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is proposed. The proposed pixel circuit, which composed of five TFTs and one capacitor, could compensate the shift of threshold voltage of OLED as well as the threshold voltage of a-Si:H. We fabricated the pixel circuits on the glass sub...
متن کامل